wide bandgap semiconductor中文是什么意思

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中文翻譯
造句

寬禁帶半導(dǎo)體

wide adj. (opp. narrow) 1.寬闊的。 2 ...
semiconductor n. 【物理學(xué)】半導(dǎo)體。
narrow bandgap semiconductor 窄禁帶半導(dǎo)體
wide bandgap emitter 寬禁帶發(fā)射極
bandgap 帶隙; 頻帶間隙
bandgap structure 帶隙構(gòu)造
bandgap transition 帶隙躍遷
photonic bandgap 光子能隙
trimmed bandgap 平衡帶隙
on semiconductor 安森美
low bandgap material 窄帶隙材料
wide of 不能勝任的; 不適宜…
semiconductor-metal-semiconductor 半導(dǎo)體
actions semiconductor 珠海炬力
alliance semiconductor alliance半導(dǎo)體
alpha semiconductor alpha半導(dǎo)體
amorphous semiconductor 非晶半導(dǎo)體; 非晶態(tài)半導(dǎo)體; 非晶形半導(dǎo)體; 非晶質(zhì)半導(dǎo)體
antiferromagnetic semiconductor 反鐵磁半導(dǎo)體
bare semiconductor 裸露半導(dǎo)體
bcd semiconductor 半導(dǎo)體制造有限公司
binary semiconductor 二元半導(dǎo)體; 二元化合物半導(dǎo)體
bipolar semiconductor 雙極半導(dǎo)體; 雙極型半導(dǎo)體
boron semiconductor 摻硼半導(dǎo)體
carriers in semiconductor 半導(dǎo)體中的載流子

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例句與用法

Wide bandgap semiconductor
寬禁帶半導(dǎo)體
Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar
Algan / ganhemt的高頻大功率應(yīng)用在很大程度上受制于電流崩塌效應(yīng)。
As a wide bandgap semiconductor material , silicon carbide is an exellent material with superior thermal , electrical , mechanical and chemical properties for the fabrication of high temperature , high power , high frequency and radiation hardening electronic devices
Sic是一種寬帶隙半導(dǎo)體材料、第三代半導(dǎo)體材料的代表，是制造高溫、高頻、大功率、抗輻照等半導(dǎo)體器件的優(yōu)選材料，又被稱為極端電子學(xué)材料，在微電子學(xué)領(lǐng)域具有廣闊的應(yīng)用前景。
Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors , bulk - acoustic - wave devices , surface - acoustic - wave devices , varistors , light emitting , light detecting devices and so on . undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films
Zno是一種新型的直接帶隙寬禁帶半導(dǎo)體材料,具有六方纖鋅礦結(jié)構(gòu),較高的激子束縛能( 60mev ) ,較低的電子誘生缺陷和閾值電壓低等優(yōu)點(diǎn),在uv探測(cè)器、藍(lán)紫光led和ld等光電子器件領(lǐng)域有巨大的應(yīng)用潛景。

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